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Polysilicon

Daqo New Energy Corp. utilizes a closed-loop modified Siemens process to produce high-purity polysilicon. The Company has consolidated solid industry know-how with its in-house expertise, with a number of patents based on its innovation, and has adopted an integrated quality management system in order to ensure quality of its products and compliance with environmental, health and safety requirements at every step of its production. Medium to large blocks of solar-grade polysilicon are produced using the chemical vapor deposition process reactors, and the polysilicon blocks are fragmented and packaged in clean rooms to avoid surface contamination.

Product Details

Solar-grade polysilicon is divided into block and rod according to the shape, divided into N-type and P-type according to the conductivity type, and divided into four grades according to the differences in technical indexes. All of the Company’s silicon block sizes are within 3-120mm (from which large silicon block sizes are between 50-120mm), and silicon rod sizes are within 150-450mm. Although the Company currently produces 16 different products depending on the shape, conductivity type, grade and size, the five main products for sale are classified as: N-type polysilicon, Mono recharging polysilicon chips, Mono dense-structure polysilicon, Mono popcorn-structure polysilicon and Mono coral-structure polysilicon.

 N-Type Polysilicon

 Product Description:

  • No-need-to-cleaning or after-cleaning meets the requirements for direct use;
  • The depth of surface particle dimples is less than 20 mm, and the depth of internal loose structure is less than 20 mm.

 

 Product Specification (N-type):

  • Phosphorus concentration (ppta): ≤300
  • Boron concentration (ppta): ≤100
  • Carbon concentration (ppma): ≤0.2
  • Oxygen concentration (ppma): ≤0.2
  • Minority carrier lifetime (µs): ≥1200

Mono Recharging Polysilicon Chips

 Product Description:

  • Classified as small silicon block sizes between 8-50 mm;
  • Include both small size mono dense-structure polysilicon and small size popcorn-structure polysilicon.

 

 Product Specification (P-type):

  • Phosphorus concentration (ppta): ≤400
  • Boron concentration (ppta): ≤150
  • Carbon concentration (ppma): ≤0.2
  • Oxygen concentration (ppma): ≤0.2
  • Minority carrier lifetime (µs): ≥1000

Mono Dense-Structure Polysilicon

 Product Description:

  • The depth of surface particle dimples is less than 5 mm;
  • The cross-sectional structure is dense, the appearance has no abnormal color, and there is no oxidized interlayer.

 

 Product Specification (P-type):

  • Phosphorus concentration (ppta): ≤400
  • Boron concentration (ppta): ≤150
  • Carbon concentration (ppma): ≤0.2
  • Oxygen concentration (ppma): ≤0.2
  • Minority carrier lifetime (µs): ≥1000

Mono Popcorn-Structure Polysilicon

 Product Description:

  • The depth of surface particle dimples is 5-20 mm;
  • The appearance has no abnormal color, and there is no oxidized interlayer.

 

 Product Specification (P-type):

  • Phosphorus concentration (ppta): ≤400
  • Boron concentration (ppta): ≤150
  • Carbon concentration (ppma): ≤0.2
  • Oxygen concentration (ppma): ≤0.2
  • Minority carrier lifetime (µs): ≥1000

Mono Coral-Structure Polysilicon

 Product Description:

  • The cross-sectional structure is loose;
  • The depth of surface particle dimple is ≥20 mm;
  • The appearance has no abnormal color, and there is no oxidized interlayer.

 

 Product Specification (P-type):

  • Phosphorus concentration (ppta): ≤400
  • Boron concentration (ppta): ≤150
  • Carbon concentration (ppma): ≤0.2
  • Oxygen concentration (ppma): ≤0.2
  • Minority carrier lifetime (µs): ≥1000
Polysilicon is a complex specialty chemical process requiring years of experience with proprietary know-how